Prof Can Li | Electrical Properties of Materials | Best Researcher Award

Prof Can Li | Electrical Properties of Materials | Best Researcher Award

Prof. Dr. Can Li is an innovative researcher and Assistant Professor at the University of Hong Kong, specializing in neuromorphic computing, AI hardware, and memristor-based systems πŸ§¬πŸ’Ύ. He earned his Ph.D. in Electrical and Computer Engineering from UMass Amherst, after completing his M.S. and B.S. in Microelectronics at Peking University πŸ“˜πŸ”Œ. With over 90 publications, HK$45M+ in grants, and multiple patents, his work bridges advanced electronics, machine learning, and brain-inspired systems πŸŒπŸ“Š. He actively mentors students, collaborates internationally, and serves on major editorial boards, shaping the future of intelligent computing technology πŸš€πŸ”.

Prof Can Li, The University of Hong Kong, Hong Kong

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Education πŸŽ“

Prof. Dr. Can Li earned his Ph.D. in Electrical and Computer Engineering from the University of Massachusetts Amherst in 2018, under the mentorship of Prof. Qiangfei Xia πŸ§ πŸ“˜. His dissertation, β€œCMOS Compatible Memristor Networks for Brain-Inspired Computing”, laid the foundation for his cutting-edge work in neuromorphic hardware βš™οΈπŸ§¬. He holds both M.S. (2012) and B.S. (2009) degrees in Microelectronics from Peking University, China, mentored by Prof. Wengang Wu πŸ“‘πŸ”Œ. His academic path combines solid-state electronics, AI hardware, and advanced semiconductor design, empowering his innovations in brain-inspired and in-memory computing systems πŸŒπŸ§‘β€πŸ”§.

Experience πŸ’Ό

Prof. Can Li is currently an Assistant Professor at The University of Hong Kong (2020–Present) πŸ‡­πŸ‡°, serving in the Department of Electrical and Electronic Engineering ⚑. His academic role focuses on advanced system design, hardware acceleration, and energy-efficient computing πŸ’»πŸ”‹. Before this, he worked as a Research Associate at Hewlett Packard Labs in Palo Alto, California (2018–2020) πŸ‡ΊπŸ‡Έ, contributing to architectural innovation within the System Architecture Lab πŸ§ πŸ› οΈ. His industry and academic experience reflect a deep commitment to cutting-edge research in computer architecture and system performance optimization across real-world and theoretical applications πŸš€πŸ“Š.

Achievements & Innovations πŸ…

Prof. Can Li has received numerous prestigious honors, including being ranked in the Top 1% worldwide by citations (Clarivate, 2022–2024) πŸŒπŸ“Š, the Croucher Tak Wah Mak Innovation Award (2023) πŸ§ πŸ†, the RGC Early Career Award (2021) πŸ§‘β€πŸ”¬, and the NSFC Excellent Young Scientists Fund (2021) 🌟. He holds 17 granted patents across the US and China, focused on analog content-addressable memory (CAM), fuzzy search, optical TCAMs, and neuromorphic systems πŸ”§πŸ’‘. These contributions demonstrate his pioneering work at the interface of hardware acceleration, AI computing, and next-gen memory systems πŸš€πŸ–₯️.

Book Contributions πŸ“˜

Prof. Can Li has significantly contributed to the field of neuromorphic and in-memory computing through key book chapters in high-impact scientific texts. He co-authored β€œIn-Memory Computing with Non-volatile Memristor CAM Circuits” and β€œTa/HfOβ‚‚ Arrays for In-Memory Memristor Computing” in Memristor Computing Systems (Springer, 2022) πŸ“˜βš‘. Additionally, he authored β€œSilicon Based Memristor Devices and Arrays” in the Handbook of Memristor Networks (Springer, 2019) πŸ”πŸ§ . These works showcase his pioneering role in advancing memristor technology and its integration into next-generation computational architectures πŸ–₯️🧩.

Research Focus πŸ”¬

Prof. Can Li’s research centers on cutting-edge innovations in artificial intelligence hardware and emerging memory technologies. His work focuses on developing AI inference and training accelerators using advanced memristor-based architectures πŸ§ πŸ’Ύ. He explores novel applications of memristor crossbar arrays, including image processing, hardware security, and pattern matching πŸ–ΌοΈπŸ”πŸ”. A core part of his research also involves the CMOS-compatible integration of memristor devices at the array level, enhancing scalability and manufacturability βš™οΈπŸ”§. By bridging nanotechnology with AI computing, Prof. Li is advancing the future of energy-efficient, high-performance computing systems for next-generation intelligent electronics πŸš€πŸ–₯️.

Publications πŸ“š

Efficient Nonlinear Function Approximation in Analog Resistive Crossbars for Recurrent Neural Networks

Authors: Junyi Yang, Ruibin Mao, Mingrui Jiang, Can Li, Arindam Basu
Journal: Nature Communications, 2025

Current Opinions on Memristor-Accelerated Machine Learning Hardware

Authors: Mingrui Jiang, Yichun Xu, Zefan Li, Can Li
Journal: Current Opinion in Solid State and Materials Science, 2025
Emojis: πŸ’ΎπŸ§ πŸ§©πŸ“ˆ

Efficient Coherent Polarization Beam Combining of 16-Channel Femtosecond Fiber Lasers

Authors: Jiayi Zhang, Bo Ren, Can Li, Wenxue Li, Pu Zhou
Journal: Guangxue Xuebao/Acta Optica Sinica, 2025

Research Progress of Ultrafast Fiber Laser Amplifier Based on Gain Managed Nonlinearity (Invited)

Authors: Can Li, Bo Ren, Kun Guo, Jingyong Leng, Pu Zhou
Journal: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2025

Event-Based Multi-Object Tracking With Sparse Motion Features

Authors: Song Wang, Zhu Wang, Can Li, Xiaojuan Qi, Hayden Kwok Hay So
Journal: IEEE Access, 2025

An InGaZnO Synaptic Transistor Using Titanium-Oxide Traps at Back Channel for Neuromorphic Computing

Authors: B. F. Yang, Chen Zhang, Z. H. Zhang, Can Li, Xiaodong Huang
Journal: IEEE Transactions on Electron Devices, 2025

Dr Arun Nimmala | Electrical Properties of Materials | Best Researcher Award

Dr Arun Nimmala | Electrical Properties of Materials | Best Researcher Award

Dr Arun Nimmala, Indian Institute of Technology Delhi, India

Dr. Arun Nimmala is an expert in micro/nano fabrication, nano-electronics, and semiconductor devices, specializing in memory devices based on Transition Metal Oxides (TMO) like HfO2 and 2D materials such as MoS2. His doctoral research focused on the effects of gamma and ion irradiation on RRAM devices. With postdoctoral experience at IIT Delhi and a research associate role at the University of Hyderabad, he has contributed significantly to the field of nanoelectronics. Dr. Nimmala has received multiple awards, including Best Poster Awards and UGC-JRF/SRF. He excels in cleanroom management, training, and leading research teams. πŸ§‘β€πŸ”¬πŸ’»πŸ”¬πŸŽ“

Publication Profile

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Academic BackgroundπŸŽ“

Dr. Arun Nimmala has an impressive academic background. πŸŽ“ He earned his Ph.D. in Electronics Science and Engineering from CASEST, University of Hyderabad, in 2021. πŸ… Prior to that, he completed his M.Tech in Integrated Circuit Technology from the same institution, securing an 8.08 CGPA in 2014. πŸ’» His B.Tech in Electronics and Communication Engineering from JNTU-Hyderabad was awarded with a 72.13% in 2010. πŸ“‘ Dr. Nimmala also completed his XII (Intermediate) at Jawahar Navodaya Vidyalaya (CBSE) with 73.16% in 2006 and his X (SSC) from the same school with 80.8% in 2004. πŸŽ“πŸ“š

Professional Experience and Contributions πŸ’Ό

Dr. Arun Nimmala has held key positions in prestigious institutions throughout his career. 🌟 He is currently serving as an Institute Post-Doctoral Fellow (IPDF) at the Indian Institute of Technology Delhi (IITD) since March 2023. 🏒 Prior to this, he worked as a Research Associate at the University of Hyderabad from July 2020 to March 2023, contributing to cutting-edge research. πŸ”¬ Dr. Nimmala also gained valuable teaching experience as a Teaching Assistant at the University of Hyderabad from January 2015 to April 2020, where he supported academic programs and mentored students. πŸ“šπŸŽ“

Technical Skills and Expertise

Dr. Arun Nimmala has over 9 years of expertise in micro/nano fabrication and characterization. πŸ”¬ He has extensive experience working in ISO 5 and ISO 6 clean rooms at prestigious institutions like Nanoscale Research Facility (IIT Delhi) and the Centre for Nanotechnology (University of Hyderabad). 🏒 His skills include using advanced fabrication tools such as photolithography (EBL and mask aligner), physical vapor deposition, dry etching, chemical vapor deposition, and more. πŸ› οΈ In material and electrical characterization, Dr. Nimmala has worked with tools like the Agilent B 1500, Raman spectroscopy, AFM, FESEM, XRD/XRR, and TEM for precise analysis. πŸ§ͺ

Academic projectsπŸ’»

Dr. Arun Nimmala has worked on notable academic projects during his M.Tech and B.Tech studies. πŸŽ“ For his M.Tech project, he focused on the Synthesis, Characterization, and Radiation Damage Studies of High-k Dielectric (HfO2) Films for MOS device applications, contributing to advancements in semiconductor technology. πŸ’» His B.Tech project involved Implementing ZigBee-based Wireless Data Communication, where he explored innovative solutions for efficient communication in wireless sensor networks. πŸ“‘ These projects reflect his deep expertise in materials science, semiconductor devices, and wireless communication systems. πŸ”§

Research Focus Area 🌱🧬

His work involves the fabrication and characterization of advanced semiconductor devices, such as memory devices based on Transition Metal Oxides (TMO’s) like HfO2 and 2D materials like MoS2 for Resistive Random Access Memory (RRAM) applications. πŸ’‘ He has expertise in electron beam and photolithography techniques, as well as testing and reliability analysis of these devices. πŸ“Š Additionally, Dr. Nimmala works on thin film preparation, ion beam studies, and room-temperature electrical characterization of oxide and 2D material-based RRAM devices, contributing to the field of nanoelectronics and device engineering. πŸ’»

Publication Top NotesπŸ“„βœ¨

Refining shape and size of silver nanoparticles using ion irradiation for enhanced and homogeneous SERS activity

Fabrication and Parametric Degradation Analysis on the Silicon Heterojunction Solar Cell underΒ 60Co Gamma Irradiation

Resistive switching properties of hafnium oxide thin-films sputtered at different oxygen partial pressures

Dual metal ion (Fe3+Β and As3+) sensing and cell bioimaging using fluorescent carbon quantum dots synthesised from Cynodon dactylon

Thermal and light-induced electrical properties in nanocomposites of reduced graphene oxide and silver nanoparticles

Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices

Formation of Cu-Ni enriched phases during laser processing of non-equiatomic AlSiCrMnFeNiCu high entropy alloy nanoparticles